Infineon Applied sciences has launched the EiceDRIVER 1EDL8011 high-side gate driver, designed to guard battery-driven purposes throughout fault situations.
In battery-powered units developed by Infineon Applied sciences, like motor drives and switched-mode energy provides (SMPS), guaranteeing security when a fault happens is vital. To mitigate potential injury, high-side disconnect switches, reminiscent of MOSFETs, are sometimes employed to isolate the load from the battery. Infineon’s newest driver targets purposes together with cordless energy instruments, robotics, e-bikes, and vacuum cleaners, enhancing their reliability in case of faults. The product is especially related for engineers and builders engaged on battery-powered units who require enhanced safety mechanisms of their designs.
The newly developed driver options fast turn-on and turn-off capabilities for high-side N-channel MOSFETs, supported by its strong gate present capabilities. An built-in cost pump, mixed with an exterior capacitor, ensures sturdy startup efficiency. This inside cost pump is especially useful when the working enter voltage is low, because it maintains the mandatory MOSFET gate voltage. The gate driver IC additionally manages inrush present and incorporates fault safety measures.
Security is paramount, and the system consists of Undervoltage Lockout (UVLO) safety to forestall operation beneath probably hazardous situations. With a compact DSO-8 package deal, it matches nicely in space-constrained designs. The motive force additional provides overcurrent safety (OCP), an adjustable present setting threshold, time delay options, and a protected startup mechanism that enables for versatile blanking throughout MOSFET turn-on transitions.
The motive force operates inside a large voltage vary of 8 V to 125 V, delivering a excessive gate sinking present of as much as 1 A for environment friendly switching. Its low off-mode quiescent present of simply 1 µA considerably reduces energy consumption throughout sleep mode. Moreover, the V_DS sense characteristic is employed to set off an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon plans to showcase an indication of 1EDL8011 on the upcoming OktoberTech 2024 international expertise discussion board in Silicon Valley on 17 October. For additional particulars, go to Infineon’s web site or click here.